ALE Etching System Configurator

      Home / ALE Etching System Configurator
      ALE Etching System Configurator
      Choose the maximum subsrate size. All substrates with sizes smaller than the maxium substrate size can be processed as well as very small samples on top of a carrier
      Choose an ICP source for high plasma dencity and ECR Hollow Cathode source for very high plasma density. The plasma head includes RF biasing to remove the adsorbed radicals for soft ALE
      Choose 600W or 1KW for ICP or ECR Hollow plasma source
      Substrate heating up to 400ºC
      Substrate heating is needed for thermal ALE
      Both options are using an adequate turbomolecular pump, backed up with Dry Scroll pump and N2 slow vent. The vacuum of the system is monitored in real time with a wide range gauge while the deposition process is monitored in real time with a Baratron type gauge.
      Choose the QCM option for good precision on the end detection limit, interferometry for high precision end limit detection of transpoarent films and ellipsometry for thickness or optical constants end limit detection
      Gas Flow Control
      In the standard setup there is one N2 MFC included for purging the precursors lines and an Ar MFC for the plasma source. Choose any other additional gas supply for reactive gases like O₂, Cl₂, SF₆, etc.. All MFCs come with with SS gas lines and fast electronic shut-off valves.
      Ozone can be generated in the plasma source by introducing oxygen to the plasma source or an external ozone generator can be attached to the system
      Filter
      Large surface filter (heated) between the chamber and the turbo to capture unreacted precursors before reaching the pump.
      Load Lock with linear drive, pneumatic isolation door, 70l/sec turbo pump backed up with dry pump and gauge, for single wafers or for wafer cassettes (for 8 wafers)
      Name
      Name
      First Name
      Last Name