The Nano-Master’s planar ICP source volume is 10x smaller than the cylindrical ICP source volume which is 1.6 liters only and occupies the small chamber volume, requires only a 260l/sec corrosive turbo molecular pump to pump down the chamber and reaches a base pressure of 5×10-7 torr in a clean system in 13” Al chamber. View more...Planar ICP source
Plasma Enhanced Chemical Vapor Deposition (PECVD) and Plasma Enhanced Atomic Layer Deposition (PEALD) are both plasma-assisted thin film deposition techniques widely used in semiconductor manufacturing. PECVD relies on continuous gas-phase reactions activated by a plasma to deposit films at relatively low substrate temperatures, making it ideal for fast deposition of materials such as SiO₂, Si₃N₄, or amorphous carbon. In contrast, PEALD employs sequential, self-limiting surface reactions, enhanced by plasma activation, to deposit conformal ultra-thin films with atomic-scale thickness control and superior uniformity over complex topographies. While PECVD offers high throughput and thicker layers, PEALD is preferred for critical layers requiring precision and conformality, such as high-κ dielectrics or barrier layers. View more...PECVD-PEALD Hybrid System
Atomic Layer Deposition (ALD) is a thin film deposition technique based on sequential, self-limiting surface reactions that enable atomic-scale control over film thickness and composition. In each ALD cycle, gaseous precursors are introduced one at a time, reacting only with the surface and not in the gas phase, which ensures excellent conformality and uniformity even on high-aspect-ratio and complex 3D structures.
View more…..Continuous-Flow Plasma Enhanced Atomic Layer Deposition (PEALD)
Roll-to-Roll (R2R) Plasma-Enhanced Atomic Layer Deposition (PEALD)Nano-master introduces an innovative roll-to-roll (R2R) plasma-enhanced atomic layer deposition (PEALD) system designed for the continuous processing of flexible substrates and applicable to inline multilayer ALD coating on glass panels. The system addresses the need for high-throughput, uniform, and conformal thin-film deposition on flexible materials, which is critical for applications such as flexible electronics, displays, barrier coatings and panels. Having the patented Continuous Flow process the individual layer coating modules can be maximally packed allowing simultaneous deposition maximum number of layers in a single pass. View more…Roll-to-Roll (R2R) Plasma-Enhanced Atomic Layer Deposition (PEALD)
In vacuum-based thin film deposition systems such as sputtering, PECVD, or RIE, the configuration of the pumping system plays a critical role in process stability, pressure control, and contamination management. Two common configurations are the direct attachment of the turbo pump to the process chamber, and the use of a gate valve between the chamber and pump. This comparison evaluates the advantages and limitations of each setup, focusing on key parameters such as base pressure performance, process flexibility, mechanical reliability, and suitability for plasma-based applications. View more….Turbo Pump Speed vs Gate Valve Pressure Control
Nano-master Megasonic Cleaning Patented TechnologyMegasonic cleaning is critical in semiconductor manufacturing because it enables non-destructive removal of submicron and nanoscale contaminants from delicate wafer surfaces and structures. As device geometries shrink below 10 nm, even particles smaller than 100 nm can cause defects, yield loss, or reliability issues. Traditional physical or chemical cleaning methods can either be ineffective at these scales or damage fine features.
Megasonic cleaning uses high-frequency acoustic waves (typically 1–3 MHz) to generate microscopic kinetic motion without cavitation bubbles in a liquid medium which can damage delicate artifacts. View more….. Megasonic Cleaning Patented Technology
Planar Off-Axis Magnetron Sputtering
n the planar off-axis configuration, the magnetron target is positioned parallel to the substrate but offset from it. This arrangement reduces direct bombardment of the substrate by high-energy particles, leading to smoother films with fewer defects.
. View more…..Confocal vs Off-Axis Magnetrons
Plasma sources are essential in semiconductor manufacturing for applications such as etching, cleaning, and thin-film deposition. Common plasma generation techniques include RF (radio frequency), ICP (inductively coupled plasma), microwave, and hollow cathode configurations. RF plasmas, widely used in reactive ion etching (RIE), are simple and cost-effective but typically offer lower plasma densities. ICP sources, by contrast, deliver high-density, low-pressure plasmas with excellent uniformity, making them suitable for advanced pattern transfer and deep etching. Microwave plasmas, often employed in high-purity or high-efficiency deposition processes, provide very high energy efficiency and are compatible with remote plasma configurations. View more…ECR Enhanced Hollow Cathode Plasma Source (HCPS)
Switching type E-Beam source power supplyA switch-mode (switching) power supply (SMPS) regulates output power by:
Converting AC to DC
Switching transistors on/off at high frequency (kHz–MHz)
Using feedback loops to tightly control beam current, voltage, and power
This is in contrast to:
Linear / thyristor / transformer-rectifier supplies (old-school), which regulate power
by dissipating excess energy as heat
