Thermal PVD Deposition System Configurator

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      Thermal PVD Deposition System Configurator
      Choose the maximum subsrate size. All substrates with sizes smaller than the maxium substrate size can be processed as well as very small samples on top of a carrier
      Dual crucibles evaporator with individyal pneumatic shutter for each crucible. Easily replaceable crucibles or metal boats
      SCR DC power supply switchable between crucibles, with accurate current control. Choose 2KW most metal depositions with boats or filaments, 6KW for higher rates or indirect heating of oxides, ceramics and 10KW for large area evaporation or materials with poor thermal conductivity
      Dual Power Supply
      This option is used for co-evaporation of two materials to create alloys, doped layers, or compound films with controlled stoichiometry.
      The single substrate stage includes rotation capability with up to 20rpm speed while the multi-substrate Stage has planetary fixture for four 4 inches wafers or three 6 inches wafers.
      Single Substrate Tilt
      Tilting is essential to Glancing Angle Deposition (GLAD). GLAD allows fabrication of custom 3D nanostructures, tunable porosity (30–90%) materials and films with optical, mechanical or magnetic anisotropy.
      Choose heating up to 300ºC for organic-free deposition like for soft metals (Au, Al, Cu) on Si, glass or polymers to improve adhesion, 600ºC heating for Oxides (e.g., TiO₂, SiO, Al₂O₃) and for better stoichiometry, 800ºC for high-temp oxide films (e.g., ZnO, SnO₂) and films requiring grain growth. Choose cooling for polymers deposition, avoid film stress, improve uniformity in multilayer deposition and avoid substrate outgassing.
      The vacuum system uses an adequate turbomolecular pump, backed up with Dry Scroll pump and N2 slow vent. Higher vacuum is necessary when high reactive metals are used like Ti, Si, Zr or Mg to avoid contamination with their oxides, when multilayers are deposited to avoid interfacial diffusion and for GLAD becasue it improves columnar uniformity.
      The standard Quartz Crystal Microbalance (QCM) is used to measure the film thickness. The system stops the deposition when target thickness is reached or rate drift is detected. When it is necessary to use the optical constants of the deposited layer as an end limit detection method, in-situ ellipsometry is needed
      Ion source
      Wide angle ion source assembly for substrate cleaning.
      Additional Deposition Techniques
      2” Magnetron gun with shutter and Ar MFC with SS gas lines for sputtering materials with RF power for Sputtering and/or 6KW switching power supply for E-beam Evaporation
      Load Lock with linear drive, pneumatic isolation door, 70l/sec turbo pump backed up with dry pump and gauge, for single wafers or for wafer cassettes (for 8 wafers)
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