Sputtering PVD Deposition System Configurator

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      Sputtering PVD Deposition System Configurator
      Sputter-down is the most common setyp for high film quality, reliability, and process uniformity while sputter-up should be used for angle-dependent (GLAD( thin film deposition
      Choose the maximum subsrate size. All substrates with sizes smaller than the maxium substrate size can be processed as well as very small samples on top of a carrier
      Use 2 inches off-axis magnetrons when 4-6 sources are needed or 3 inches off-axis magnetrons when 1-3 sources are needed. Choose tilted magnetrons for co-sputtering applications. Choose on-axis magnetrons for single magnetron applications.
      Single magnetron could be of any size and type. For two or more magnetrons, only off-axis and tilted setups can be used
      Source Power Supply
      Choose a 300W RF power supply for 2 inches magnetrons and insulator materials, a 600W RF power supply for 2 or 3 inches magnetrons and insulator materials, a 1KW DC power supply for conductive materials and a 1KW DC polsed power supply for reactive sputtering of oxides/nitrides. You can choose more than one power supplies.
      Double Power Supply
      For materials co-sputtering and tuning stoichiometry in reactive compound formation
      Substrate Tilt
      The standard setup includes platen rotation between 0 and 20 rpm. Choose this option for Glancing Angle Deposition (GLAD). GLAD allows fabrication of custom 3D nanostructures, tunable porosity (30–90%) materials and films with optical, mechanical or magnetic anisotropy.
      Enhance film adhesion, densify films, control stress and grain size, improve surface smoothness and assist in reactive film formation or cleaning
      Choose heating up to 300ºC for low-temperature substrates like flexible electronics and soft materials deposition like Al, Ag or Au where minimal heating suffices, 600ºC heating for dense, stress-controlled metal oxide or nitride films on Si or glass for good grain growth, adhesion and reduced stress, 800ºC heating for high-quality crystalline films, GLAD and refractory materials to achieve high crystallinity, large grains and strong adhesion on high temperature substrates like sapphire, Si or quartz.
      He Backside Cooling
      The standard system includes water cooled platen. Choose He backside cooling for better heat transfer
      The vacuum system uses an adequate turbomolecular pump, backed up with Dry Scroll pump and N2 slow vent. Higher vacuum is necessary when high reactive metals are used like Ti, Si, Zr or Mg to avoid contamination with their oxides, when multilayers are deposited to avoid interfacial diffusion and for GLAD becasue it improves columnar uniformity.
      The standard Quartz Crystal Microbalance (QCM) is used to measure the film thickness. The system stops the deposition when target thickness is reached or rate drift is detected. When it is necessary to use the optical constants of the deposited layer as an end limit detection method, in-situ ellipsometry is needed
      Reactive Sputtering
      Ar MFC with SS gas lines and pneumatic shut-off valves and N2 slow vent are included in the standard setup. Choose one or two of these options for reactive sputtering applications
      Ion source
      Wide angle ion source assembly for substrate cleaning.
      Additional Deposition Techniques
      Choose one or both of these options for additional evaporation techniques inside the same process chamber
      Load Lock with linear drive, pneumatic isolation door, 70l/sec turbo pump backed up with dry pump and gauge, for single wafers or for wafer cassettes (for 8 wafers)
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