RIE Etching System Configurator

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      RIE Etching System Configurator
      Choose the maximum subsrate size. All substrates with sizes smaller than the maxium substrate size can be processed as well as very small samples on top of a carrier
      Choose a RF showerhead source for medium plasma density or a ICP source for high plasma dencity.
      Choose 300W for up to 4 inches substrates and low plasma density, 600W for up to 8 inches substrates and medium plasma density or 1KW for high plasma density.
      Substrate Bias
      Substrate bias controls the ion energy that strikes the substrate and influence theetch rate, anisotropy, selectivity, and substrate damage. Choose the 300W option for shallow etches and better selectivity or 600W for higher etching rates and deeper etching or D-RIE
      Choose 200ºC for light polymer removal like photoresists, 300ºC for metal etching and 400ºC for hard materials etching.
      Substrate Cooling
      Choose the substrate cooling options for high density plasma like in ICP-RIE and D-RIE applications and He backside cooling for a better heat transfer. Choose the cryo-cooling option for cryo-RIE applications
      The vacuum system uses an adequate turbomolecular pump, backed up with Dry Scroll pump and N2 slow vent. The vacuum of the system is monitored in real time with a wide range gauge while the deposition process is monitored in real time with a Baratron type gauge.
      Choose the OES option for good precision on the end detection limit or interferometry for a more precise detection.
      Mass flow controllers for each gas with pneumatic shut-off valves, electro-polished SS gas lines and end-of-process gas line flush. Separate gas pod for reactive/toxic gasses with gas leak sensors
      D-RIE Option
      2 additional MFCs for SF6 and O2 with fast switching valves for Bosch process or cryo-RIE for D-RIE applications. ICP plasma source is also needed.
      Load Lock with linear drive, pneumatic isolation door, 70l/sec turbo pump backed up with dry pump and gauge, for single wafers or for wafer cassettes (for 8 wafers)
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