PECVD Deposition System Configurator

      Home / PECVD Deposition System Configurator
      PECVD Deposition System Configurator

      PECVD Deposition System Configurator

      Using our PECVD Deposition System Configurator you can build Plasma Enhanced Chemical Vapor Deposition system that fits your laboratory needs. If you need a quote for the instrument you have configured, please add your email address and use the submit button. One of our product managers will contact you with a quote.

      Choose the maximum subsrate size. All substrates with sizes smaller than the maxium substrate size can be processed as well as very small samples on top of a carrier
      Choose a RF showerhead source for medium plasma density, ICP source for high plasma dencity, ECR Hollow Cathode source for very high plasma density and Microwave source for low to moderate plasma density ideal for for depositing single and polycrystalline diamonds
      Choose 600W or 1KW for RF showerhead, ICP and ECR Hollow head or choose 3KW for the Microwave head
      Substrate Rotation
      Substrate rotation is usefull for large substrates (>150mm), for minimize film stress variation or for patterned wafers or topography
      Substrate Bias
      600W RF power supply with auto tuner for biasing the platen to be able to tune the ion energy arriving at the substrate, influencing film density, stress, adhesion, and etch-back effects.
      Choose 300ºC for temperature-sensitive substrates like polymers, glass, III-Vs (e.g. GaAs), and flexible electronics, 600ºC for improved film density, refractive index and stress control or 800ºC for depositing single and polycrystalline diamonds. Helium backside cooling is used for better heat transfer, recommended for low-temperature growth of oxides and nitrides.
      The vacuum system uses an adequate turbomolecular pump, backed up with Dry Scroll pump and N2 slow vent. The vacuum of the system is monitored in real time with a wide range gauge while the deposition process is monitored in real time with a Baratron type gauge.
      Cjoose the OES option for good precision on the end detection limit, interferometry for high precision end limit detection of transpoarent films and ellipsometry for thickness or optical constants end limit detection
      Mass flow controllers for each gas with pneumatic shut-off valves, electro-polished SS gas lines and end-of-process gas line flush. Separate gas pod for reactive/toxic gasses with gas leak sensors
      Bubblers for liquid precursors like TEOS, TMPi or TEB, with heated jacked and heated gas lines
      Load Lock with linear drive, pneumatic isolation door, 70l/sec turbo pump backed up with dry pump and gauge, for single wafers or for wafer cassettes (for 8 wafers)
      Name
      Name
      First Name
      Last Name