PA-MOCVD Deposition System Configurator

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      PA-MOCVD Deposition System Configurator
      Choose the maximum subsrate size. All substrates with sizes smaller than the maxium substrate size can be processed as well as very small samples on top of a carrier
      Choose a RF showerhead source for medium plasma density, ICP source for high plasma dencity and ECR Hollow Cathode source for very high plasma density
      Choose 600W or 1KW for RF showerhead, ICP and ECR Hollow head
      PA-MOCVD is using significantly less temperature than classic MOCVD. Choose up to 600ºC for most applications and up to 900ºC for high crystal quality or stress relaxation
      The vacuum system uses an adequate turbomolecular pump, backed up with Dry Scroll pump and N2 slow vent. The vacuum of the system is monitored in real time with a wide range gauge while the deposition process is monitored in real time with a Baratron type gauge. High surface area filter is provided at the exhaust of the chamber and it is heated to avoid unused precursors reach the vacuum pump.
      Cjoose the QCM option for good precision on the end detection limit, interferometry for high precision end limit detection of transpoarent films and ellipsometry for thickness or optical constants end limit detection
      Gas Flow Control
      The standard setup includes a N2 MFC for purging and the Ar MFC for the plasma creation. Mass flow controllers for each gas with pneumatic shut-off valves, electro-polished SS gas lines and end-of-process gas line flush. Separate gas pod for reactive/toxic gasses with gas leak sensors
      150cc bubblers with N2 carrier gas with heater set points for the bubbler and heated gas lines. All lines and valves are 316L electro-polished SS with orbital welding and VCR type fittings.
      Load Lock with linear drive, pneumatic isolation door, 70l/sec turbo pump backed up with dry pump and gauge, for single wafers or for wafer cassettes (for 8 wafers)
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